Search results for " memristors"

showing 2 items of 2 documents

Electrochemical polymerization of ambipolar carbonyl-functionalized indenofluorene with memristive properties

2019

Abstract Carbonyl-functionalized indenofluorene was electropolymerized with a high faradaic efficiency of 85% and the solid state properties of the resulting polymeric thin films were investigated. They displayed modular optical properties depending on their oxidation state. The approach used for inorganic semiconductors was applied to polyindeonofluorene derivative. Mott-Schottky analysis evidenced a switching from p-type to n-type electrical conduction, suggesting an ambipolar behaviour of the polymer. As an application, flexible organic memristors were fabricated and resistive switching properties were observed.

02 engineering and technology010402 general chemistry01 natural sciencesSettore ING-INF/01 - ElettronicaOrganic memristorsInorganic Chemistrychemistry.chemical_compoundOxidation stateElectrochemical polymerizationElectrical and Electronic EngineeringPhysical and Theoretical ChemistryThin filmSpectroscopychemistry.chemical_classificationAmbipolar diffusionbusiness.industryOrganic ChemistryPolymerSettore CHIM/06 - Chimica Organica021001 nanoscience & nanotechnologyIndenofluorene derivatives Electrochemical polymerization Organic semiconductors Organic memristorsAtomic and Molecular Physics and Optics0104 chemical sciencesElectronic Optical and Magnetic MaterialsOrganic semiconductorSemiconductorChemical engineeringchemistryOrganic semiconductors0210 nano-technologybusinessFaraday efficiencyDerivative (chemistry)Indenofluorene derivatives
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Fabrication and characterization of micrometer-scale ZnO memristors

2015

Memristors are an interesting class of resistive random access memory (RRAM) based on the electrical switching of metal oxide film resistivity . They are characterized for exhibiting resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) and have been recently considered as one of the most promising candidates for next-generation nonvolatile memory devices because of their low power consumption, fast switching operation, nondestructive readout, and remarkable scalability. The device structure is simply an oxide layer sandwiched between two metal electrodes. The switching behaviour is dependent both on the oxide material and the choice of metal electrodes.…

Settore ING-IND/23 - Chimica Fisica ApplicataFabrication and characterization micrometer-scale ZnO memristorsSettore ING-INF/01 - Elettronica
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